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Microscopic study of atomically thin two-dimensional MoS2 via
更新日期:2017-12-04  

题    目:Microscopic study of atomically thin two-dimensional MoS2 via  advanced transmission electron microscopy
报告人:金传洪 教授
单    位:浙江大学
时    间:2017/12/8 15:00
地    点:新区2#235会议室
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附简介:
Chuanhong Jin received his Ph.D. degree from Institute of Physics in 2006, CAS. He then moved to the Nanotube Research Center in AIST Japan, first as a JSPS Postdoctoral Research Fellow, and later became a staff scientist. He joined the faculty of Zhejiang University in 201,1 as a Professor in the Center for Electron Microscopy, State Key Laboratory of Silicon Materials and School of Materials Science and Engineering. He received supports from the  Talents of China and the NSFC Excellent Young Scholar program.Dr. Jin has expertise in studying the atomic and electronic structure of two-dimensional materials via advanced electron microscopy and spectroscopy, focusing mostly on defect physics, growth mechanism, phase engineering, and electronic structure characterizations.

报告摘要:
The controllable growth of high quality and large-scale of atomically thin two-dimensional materials is becoming the bottleneck towards their practical applications. It is thus an essential issue to understand the microscopic growth kinetics and mechanisms of these novel two-dimensional materials. Of them, quantitative and statistic characterizations via advanced transmission electron microscopy may serve as an indispensible tool for this purpose, particular for the information at atomic level. In this work, I will introduce you a few examples on revealing (i) the distribution of point defects in monolayer molybdenum disulfide, (ii) the growth kinetics and evolution of edge structures of MoS2 (and MoSe2) flakes, (iii) the formation and atomic structures of unusual grain boundaries in hexagonal boron nitride.